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APTM50TAM65FP
Triple phase leg MOSFET Power Module
VBUS1 VBUS2 VBUS3
VDSS = 500V RDSon = 65m max @ Tj = 25C ID = 51A @ Tc = 25C
Application * Welding converters * Switched Mode Power Supplies * Uninterruptible Power Supplies * Motor control
G1
G3
G5
S1 U
S3 V
S5 W
G2
G4
G6
S2 0/VBUS1
S4 0/VBUS2
S6 0/VBUS3
Features * Power MOS 7(R) FREDFETs - Low RDSon - Low input and Miller capacitance - Low gate charge - Fast intrinsic reverse diode - Avalanche energy rated - Very rugged * Kelvin source for easy drive * Very low stray inductance - Symmetrical design - Lead frames for power connections * High level of integration Benefits * Outstanding performance at high frequency operation * Direct mounting to heatsink (isolated package) * Low junction to case thermal resistance * Solderable terminals both for power and signal for easy PCB mounting * Very low (12mm) profile * Each leg can be easily paralleled to achieve a phase leg of three times the current capability * Module can be configured as a three phase bridge * Module can be configured as a boost followed by a full bridge Max ratings 500 51 38 204 30 65 390 51 50 3000 Unit V
APTM50TAM65FP - Rev 0 September, 2004
VBUS 1
VBUS 2
VBUS 3
G1 0/VBUS 1 S1 S2 G2 0/VBUS 2
G3 S3 S4 G4 0/VBUS 3
G5 S5 S6 G6
U
V
W
Absolute maximum ratings
Symbol VDSS ID IDM VGS RDSon PD IAR EAR EAS
Parameter Drain - Source Breakdown Voltage Continuous Drain Current Pulsed Drain current Gate - Source Voltage Drain - Source ON Resistance Maximum Power Dissipation Avalanche current (repetitive and non repetitive) Repetitive Avalanche Energy Single Pulse Avalanche Energy Tc = 25C Tc = 80C
A V m W A mJ
Tc = 25C
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed.
APT website - http://www.advancedpower.com
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APTM50TAM65FP
All ratings @ Tj = 25C unless otherwise specified Electrical Characteristics
Symbol BVDSS IDSS RDS(on) VGS(th) IGSS Characteristic Drain - Source Breakdown Voltage Zero Gate Voltage Drain Current Drain - Source on Resistance Gate Threshold Voltage Gate - Source Leakage Current Test Conditions VGS = 0V, ID = 250A Min 500
VGS = 0V,VDS = 500V VGS = 0V,VDS = 400V
Typ
Max 250 1000 65 5 100
Unit V A m V nA
Tj = 25C Tj = 125C 3
VGS = 10V, ID = 25.5A VGS = VDS, ID = 2.5mA VGS = 30 V, VDS = 0V
Dynamic Characteristics
Symbol Ciss Coss Crss Qg Qgs Qgd Td(on) Tr Td(off) Tf Eon Eoff Eon Eoff
Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Total gate Charge Gate - Source Charge Gate - Drain Charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy Turn-off Switching Energy Turn-on Switching Energy Turn-off Switching Energy
Test Conditions VGS = 0V VDS = 25V f = 1MHz VGS = 10V VBus = 250V ID = 51A Inductive switching @ 125C VGS = 15V VBus = 333V ID = 51A R G = 3 Inductive switching @ 25C VGS = 15V, VBus = 333V ID = 51A, R G = 3 Inductive switching @ 125C VGS = 15V, VBus = 333V ID = 51A, R G = 3
Min
Typ 7000 1400 90 140 40 70 21 38 75 93 1035 845 1556 1013
Max
Unit pF
nC
ns
J
J
Source - Drain diode ratings and characteristics
Symbol IS VSD dv/dt trr Qrr Characteristic Continuous Source current (Body diode) Diode Forward Voltage Peak Diode Recovery Reverse Recovery Time Reverse Recovery Charge
Test Conditions Tc = 25C Tc = 80C
Min
Typ
VGS = 0V, IS = - 51A Tj = 25C IS = - 51A VR = 250V diS/dt = 100A/s Tj = 125C Tj = 25C Tj = 125C 2.6 9.6
Max 51 38 1.3 15 270 540
Unit A V V/ns ns C
APTM50TAM65FP - Rev 0 September, 2004
Eon includes diode reverse recovery. In accordance with JEDEC standard JESD24-1. dv/dt numbers reflect the limitations of the circuit rather than the device itself. IS - 51A di/dt 700A/s VR VDSS Tj 150C
APT website - http://www.advancedpower.com
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APTM50TAM65FP
Thermal and package characteristics
Symbol RthJC VISOL TJ TSTG TC Torque Wt Characteristic Junction to Case IGBT 2500 -40 -40 -40 3
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Min
Typ
Max 0.32 150 125 100 5 250
Unit C/W V C N.m g
Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight
To heatsink
M6
Package outline
5 places (3:1)
APT website - http://www.advancedpower.com
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APTM50TAM65FP - Rev 0 September, 2004
APTM50TAM65FP
Typical Performance Curve
Maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.35 Thermal Impedance (C/W) 0.3 0.25 0.2 0.15 0.1 0.05 0.3 0.1 0.05 0.0001 0.001 0.9 0.7 0.5
Single Pulse 0.01 0.1 1 10
0 0.00001
rectangular Pulse Duration (Seconds) Low Voltage Output Characteristics 200 ID, Drain Current (A) 160 120 80 40 5.5V 0 0 VGS =10&15V 7V 6.5V 6V 5V 25 ID, Drain Current (A) 8V 150 125 100 75 50 25 0 0 2 4 6 8 VGS, Gate to Source Voltage (V) DC Drain Current vs Case Temperature 60 ID, DC Drain Current (A)
Normalized to VGS =10V @ 25.5A
Transfert Characteristics
V DS > ID(on)xRDS(on)MAX 250s pulse test @ < 0.5 duty cycle
TJ =25C
TJ =125C
TJ=-55C
5 10 15 20 VDS, Drain to Source Voltage (V) RDS(on) vs Drain Current
RDS(on) Drain to Source ON Resistance
1.1
1.05
50 40 30 20 10 0
APTM50TAM65FP - Rev 0 September, 2004
VGS=10V
1 VGS =20V 0.95
0.9 0 10 20 30 40 50 ID, Drain Current (A) 60
25
50 75 100 125 TC, Case Temperature (C)
150
APT website - http://www.advancedpower.com
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APTM50TAM65FP
RDS(on), Drain to Source ON resistance (Normalized) Breakdown Voltage vs Temperature BVDSS, Drain to Source Breakdown Voltage (Normalized) 1.2 1.1 1.0 0.9 0.8 0.7 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Threshold Voltage vs Temperature 1.2 VGS(TH), Threshold Voltage (Normalized) 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 125 150 TC, Case Temperature (C) Capacitance vs Drain to Source Voltage 100000 C, Capacitance (pF) Ciss Coss 1000 Crss 1000 I D, Drain Current (A)
limited by RDSon
ON resistance vs Temperature 2.5 2.0 1.5 1.0 0.5 0.0 -50 -25 0 25 50 75 100 125 150 TJ, Junction Temperature (C) Maximum Safe Operating Area
VGS=10V ID= 25.5A
100
100 us 1 ms 10 ms
10
1
Single pulse TJ =150C 1
100 ms
0.1 10 100 1000 VDS, Drain to Source Voltage (V)
Gate Charge vs Gate to Source Voltage VGS, Gate to Source Voltage (V) 14 12 10 8 6 4 2 0 0 25 50 75 100 125 150 175
APTM50TAM65FP - Rev 0 September, 2004
VDS=400V
ID=51A TJ=25C
VDS=100V VDS=250V
10000
100
10 0 10 20 30 40 VDS, Drain to Source Voltage (V) 50
Gate Charge (nC)
APT website - http://www.advancedpower.com
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APTM50TAM65FP
Delay Times vs Current 80 70 td(on) and t d(off) (ns) 60 50 40 30 20 10 10 20 30 40 50 60 I D, Drain Current (A) 70 80
V DS=333V RG =3 T J=125C L=100H
Rise and Fall times vs Current 160 140 120 t r and tf (ns) 100 80 60 40 20 0 10 20 30 40 50 60 ID, Drain Current (A) 70 80
VDS=333V RG=3 T J=125C L=100H
td(off)
tf
tr
td(on)
Switching Energy vs Current 3 Switching Energy (mJ) 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 I D, Drain Current (A) 70 80 Eon Switching Energy (mJ)
VDS=333V RG=3 TJ=125C L=100H
Switching Energy vs Gate Resistance 5 4 3 2 1 0 0 5 10 15 20 25 30 35 40 45 Gate Resistance (Ohms) Source to Drain Diode Forward Voltage 1000
VDS=333V ID=51A TJ=125C L=100H
Eoff
Eon
Eoff
Operating Frequency vs Drain Current 400 Frequency (kHz) 350 300 250 200 150 100 50 0 10 15 20 25 30 35 I D, Drain Current (A) 40 45
hard switching ZCS ZVS VDS=333V D=50% RG=3 TJ=125C TC=75C
I DR, Reverse Drain Current (A)
450
100
TJ =150C TJ =25C
10
1 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
APTM50TAM65FP - Rev 0 September, 2004
VSD, Source to Drain Voltage (V)
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website - http://www.advancedpower.com
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